SI9430DY |
RFQ for SI9430DY Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| SI9430DY | - | - | 00+ |
This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Typical Application |
Features |
| · Battery switch· Load switch· Motor controls | · -5.8 A, -20 V. RDS(on) = 0.050 W @ VGS = -10 V RDS(on) = 0.090 W @ VGS = -4.5 V.· Low gate charge.· Fast switching speed.· High power and current handling capability. |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
-20 |
V |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current - Continuous (Note 1a) - Pulsed |
-5.8 |
A |
|
-20 | |||
|
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 |
W |
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